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high resolution powder xrd  (Rigaku Corporation)


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    Rigaku Corporation high resolution powder xrd
    High Resolution Powder Xrd, supplied by Rigaku Corporation, used in various techniques. Bioz Stars score: 99/100, based on 44197 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/high+resolution+xrd/SmartLab/pm42579411-274-26-29
    Average 99 stars, based on 44197 article reviews
    high resolution powder xrd - by Bioz Stars, 2026-10
    99/100 stars

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    Related Articles

    Transmission Assay:

    Article Title: Interface-Engineered, Low-Damage IGZO/HfO 2 Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process
    Article Snippet: .. The crystalline structure and interfacial characteristics were confirmed using high-resolution XRD (SmartLab, Rigaku, Tokyo, Japan) and high-resolution transmission electron microscopy (HR-TEM; JEM-2100F (HR), JEOL, Suwon-si, Republic of Korea). ..

    Electron Microscopy:

    Article Title: Interface-Engineered, Low-Damage IGZO/HfO 2 Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process
    Article Snippet: .. The crystalline structure and interfacial characteristics were confirmed using high-resolution XRD (SmartLab, Rigaku, Tokyo, Japan) and high-resolution transmission electron microscopy (HR-TEM; JEM-2100F (HR), JEOL, Suwon-si, Republic of Korea). ..

    Concentration Assay:

    Article Title: Deactivation Phenomena of Highly B-doped SiGe Epitaxial Films Subjected to Nanosecond Laser Annealing Followed by Rapid Thermal Annealing
    Article Snippet: Nanosecond laser annealing (NLA) is a promising technique for achieving ultra-high dopant activation in Bdoped SiGe (SiGe:B) films while suppressing dopant diffusion, thus effectively reducing contact resistivity in semiconductor devices.. Despite its advantages, these active dopants are susceptible to deactivation during subsequent thermal processes.. This study investigates deactivation phenomena and kinetics in NLA-treated SiGe: B films with active B concentrations of 1.1×1021 (low-B), 2.2×1021 (medium-B), and 3.8×1021 (high-B) atoms/ cm3 under post-annealing in low (400–700C) and high (800–900C) temperature regimes.

    Membrane:

    Article Title: Epitaxial Strain Engineering of High-Quality Freestanding Single-Crystalline Complex Oxides.
    Article Snippet: Freestanding strongly correlated complex oxide thin films hold great potential in next-generation electronic and energy applications.. Their high integrability and tunable properties may surpass those in bulk or epitaxial films.. Water-assisted lift-off method is widely used to produce single-crystalline complex oxide membranes.



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    Heteroepitaxial LaNiO 3 (LNO) thin films were synthesized via pulsed laser deposition on SrTiO 3 (STO), LaSrAlO 4 (LSAO), and LaAlO 3 (LAO) substrates to induce varying degrees of lattice strain. (a) Atomic force microscopy (AFM) was used to analyze the surface morphology and roughness of the films. (b) A cross‐sectional high‐angle annular dark‐field (HAADF) scanning transmission electron microscopy (STEM) image of LNO on STO illustrating the thin film's morphology. (c) Reciprocal space mapping (RSM) was employed to investigate strain‐induced variations in the lattice parameters of LNO along the in‐plane (xy) and out‐of‐plane (z) directions (see Figure for mapping results). (d) The epitaxial growth of LNO thin films on each substrate was confirmed through HAADF imaging and atomic‐resolution energy‐dispersive X‐rtay spectroscopy (EDS) mapping. (e) EDS mapping images of LNO−LAO are presented, while the corresponding mapping images for LNO−LSAO and LNO−STO are provided in Figure .
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    <t>High-resolution</t> <t>X-ray</t> <t>diffraction</t> <t>(XRD)</t> patterns of AWGCs sintered at temperatures from 700 to 1100 °C, revealing a clear temperature-dependent phase evolution.
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    Image Search Results


    Heteroepitaxial LaNiO 3 (LNO) thin films were synthesized via pulsed laser deposition on SrTiO 3 (STO), LaSrAlO 4 (LSAO), and LaAlO 3 (LAO) substrates to induce varying degrees of lattice strain. (a) Atomic force microscopy (AFM) was used to analyze the surface morphology and roughness of the films. (b) A cross‐sectional high‐angle annular dark‐field (HAADF) scanning transmission electron microscopy (STEM) image of LNO on STO illustrating the thin film's morphology. (c) Reciprocal space mapping (RSM) was employed to investigate strain‐induced variations in the lattice parameters of LNO along the in‐plane (xy) and out‐of‐plane (z) directions (see Figure for mapping results). (d) The epitaxial growth of LNO thin films on each substrate was confirmed through HAADF imaging and atomic‐resolution energy‐dispersive X‐rtay spectroscopy (EDS) mapping. (e) EDS mapping images of LNO−LAO are presented, while the corresponding mapping images for LNO−LSAO and LNO−STO are provided in Figure .

    Journal: Advanced Materials (Deerfield Beach, Fla.)

    Article Title: Strain‐Driven Surface Reconstruction During the Alkaline Oxygen Evolution Reaction: a Model Thin‐Film Study

    doi: 10.1002/adma.72847

    Figure Lengend Snippet: Heteroepitaxial LaNiO 3 (LNO) thin films were synthesized via pulsed laser deposition on SrTiO 3 (STO), LaSrAlO 4 (LSAO), and LaAlO 3 (LAO) substrates to induce varying degrees of lattice strain. (a) Atomic force microscopy (AFM) was used to analyze the surface morphology and roughness of the films. (b) A cross‐sectional high‐angle annular dark‐field (HAADF) scanning transmission electron microscopy (STEM) image of LNO on STO illustrating the thin film's morphology. (c) Reciprocal space mapping (RSM) was employed to investigate strain‐induced variations in the lattice parameters of LNO along the in‐plane (xy) and out‐of‐plane (z) directions (see Figure for mapping results). (d) The epitaxial growth of LNO thin films on each substrate was confirmed through HAADF imaging and atomic‐resolution energy‐dispersive X‐rtay spectroscopy (EDS) mapping. (e) EDS mapping images of LNO−LAO are presented, while the corresponding mapping images for LNO−LSAO and LNO−STO are provided in Figure .

    Article Snippet: Lattice constants in both the in‐plane and out‐of‐plane directions were determined via 2θ‐ω scans and RSM using high‐resolution thin‐film XRD (SmartLab, RIGAKU) with Cu K α radiation (λ = 0.15406 nm).

    Techniques: Synthesized, Microscopy, Transmission Assay, Electron Microscopy, Imaging, Spectroscopy

    High-resolution X-ray diffraction (XRD) patterns of AWGCs sintered at temperatures from 700 to 1100 °C, revealing a clear temperature-dependent phase evolution.

    Journal: RSC Advances

    Article Title: Sequential crystallization pathways in apatite–wollastonite glass-ceramics via spray pyrolysis

    doi: 10.1039/d5ra08885b

    Figure Lengend Snippet: High-resolution X-ray diffraction (XRD) patterns of AWGCs sintered at temperatures from 700 to 1100 °C, revealing a clear temperature-dependent phase evolution.

    Article Snippet: Phase identification and quantification were performed using high-resolution X-ray Diffraction (XRD) on crushed pellets (Bruker D2 Phaser, Cu Kα radiation, 2 θ range 20° to 80°).

    Techniques: